? 2010 ixys corporation, all rights reserved ds100251(03/10) v ces = 1400v i c100 = 20a v ce(sat) 5.0v t fi(typ) = 32ns genx3 tm 1400v igbts w/ diode high-speed pt igbts for 20 - 50 khz switching symbol test conditions maximum ratings v ces t j = 25c to 150c 1400 v v cgr t j = 25c to 150c, r ge = 1m 1400 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 42 a i c100 t c = 100c 20 a i cm t c = 25c, 1ms 108 a i a t c = 25c 20 a e as t c = 25c 400 mj ssoa v ge = 15v, t j = 125c, r g = 5 i cm = 40 a (rbsoa) clamped inductive load v ce v ces p c t c = 25c 250 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g advance technical information features z optimized for low switching losses z square rbsoa z high avalanche capability z anti-parallel ultra fast diode z international standard packages advantages z high power density z low gate drive requirement applications z high frequency power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts ixgh20n140c3h1 IXGT20N140C3H1 symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 100 a t j = 125c, note 1 2.0 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = i c100 , v ge = 15v, note 1 4.0 5.0 v t j = 125c 3.5 v g = gate c = collector e = emitter tab = collector to-247 (ixgh) to-268 (ixgt) g c e c (tab) e g c (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixgh20n140c3h1 IXGT20N140C3H1 symbol test conditions characteristic values (t j = 25c, unless otherwise specified) min. typ. max. g fs i c = i c100 , v ce = 10v, note 1 10 17 s c ies 1790 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 145 pf c res 50 pf q g 88 nc q ge i c = i c100 , v ge = 15v, v ce = 0.5 ? v ces 18 nc q gc 30 nc t d(on) 19 ns t ri 12 ns e on 1.35 mj t d(off) 110 ns t fi 32 ns e off 0.44 0.80 mj t d(on) 22 ns t ri 13 ns e on 2.33 mj t d(off) 144 ns t fi 380 ns e off 1.64 mj r thjc 0.50 c/w r thck to-247 0.21 c/w inductive load, t j = 25c i c = i c100 , v ge = 15v v ce = 0.5 ? v ces , r g = 5 note 2 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. reverse diode (fred) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v f i f = 20a, v ge = 0v, note 1 3.0 v t j = 125c 2.8 v i rm 19 a t rr 70 ns r thjc 0.9 c/w i f = 20a, v ge = 0v, -di f /dt = 750a/ s, v r = 800v notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . to-247 outline to-268 outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - collector 3 - emitter terminals: 1 - gate 2 & 4 - collector 3 - emitter inductive load, t j = 125c i c = i c100 , v ge = 15v v ce = 0.5 ? v ces , r g = 5 note 2 ? p 1 2 3
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